Kinetic study of H-terminated silicon nanowires oxidation in very first stages

Bashouti MY, Sardashti K, Ristein J, Christiansen S (2013)

Publication Type: Journal article

Publication year: 2013

Journal

Nanoscale Research Letters SpringerOpen

Publisher: SpringerOpen

Book Volume: 8

Pages Range: 41

DOI: 10.1186/1556-276X-8-41

Abstract

Oxidation of silicon nanowires (Si NWs) is an undesirable phenomenon that has a detrimental effect on their electronic properties. To prevent oxidation of Si NWs, a deeper understanding of the oxidation reaction kinetics is necessary. In the current work, we study the oxidation kinetics of hydrogen-terminated Si NWs (H-Si NWs) as the starting surfaces for molecular functionalization of Si surfaces. H-Si NWs of 85-nm average diameter were annealed at various temperatures from 50°C to 400°C, in short-time spans ranging from 5 to 60 min. At high temperatures (T ≥ 200°C), oxidation was found to be dominated by the oxide growth site formation (made up of silicon suboxides) and subsequent silicon oxide self-limitation. Si-Si backbond oxidation and Si-H surface bond propagation dominated the process at lower temperatures (T < 200°C). © 2013 Bashouti; licensee Springer.

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik

Involved external institutions

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE)

How to cite

APA:

Bashouti, M.Y., Sardashti, K., Ristein, J., & Christiansen, S. (2013). Kinetic study of H-terminated silicon nanowires oxidation in very first stages. Nanoscale Research Letters, 8, 41. https://doi.org/10.1186/1556-276X-8-41

MLA:

Bashouti, Muhammad Y., et al. "Kinetic study of H-terminated silicon nanowires oxidation in very first stages." Nanoscale Research Letters 8 (2013): 41.

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