Kinetic study of H-terminated silicon nanowires oxidation in very first stages

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Bashouti MY, Sardashti K, Ristein J, Christiansen S
Zeitschrift: Nanoscale Research Letters
Verlag: SpringerOpen
Jahr der Veröffentlichung: 2013
Band: 8
Seitenbereich: 41
ISSN: 1931-7573
eISSN: 1556-276X


Abstract


Oxidation of silicon nanowires (Si NWs) is an undesirable phenomenon that has a detrimental effect on their electronic properties. To prevent oxidation of Si NWs, a deeper understanding of the oxidation reaction kinetics is necessary. In the current work, we study the oxidation kinetics of hydrogen-terminated Si NWs (H-Si NWs) as the starting surfaces for molecular functionalization of Si surfaces. H-Si NWs of 85-nm average diameter were annealed at various temperatures from 50°C to 400°C, in short-time spans ranging from 5 to 60 min. At high temperatures (T ≥ 200°C), oxidation was found to be dominated by the oxide growth site formation (made up of silicon suboxides) and subsequent silicon oxide self-limitation. Si-Si backbond oxidation and Si-H surface bond propagation dominated the process at lower temperatures (T < 200°C). © 2013 Bashouti; licensee Springer.



FAU-Autoren / FAU-Herausgeber

Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik


Autor(en) der externen Einrichtung(en)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


Zitierweisen

APA:
Bashouti, M.Y., Sardashti, K., Ristein, J., & Christiansen, S. (2013). Kinetic study of H-terminated silicon nanowires oxidation in very first stages. Nanoscale Research Letters, 8, 41. https://dx.doi.org/10.1186/1556-276X-8-41

MLA:
Bashouti, Muhammad Y., et al. "Kinetic study of H-terminated silicon nanowires oxidation in very first stages." Nanoscale Research Letters 8 (2013): 41.

BibTeX: 

Zuletzt aktualisiert 2018-09-08 um 16:38