Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ostler M, Koch R, Speck F, Fromm F, Vita H, Hundhausen M, Horn K, Seyller T
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Jahr der Veröffentlichung: 2012
Band: 717-720
Seitenbereich: 649
ISSN: 0255-5476
eISSN: 1662-9752


Abstract

Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30® reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC interface is a well studied topic since successful intercalation has been shown for hydrogen [1-3]. Recently, intercalation was also shown for oxygen [4, 5]. We present angle-resolved photoemission spectroscopy (ARPES), x-ray induced photoelectron spectroscopy (XPS) and Raman spectroscopy studies to determine the quality of oxygen intercalated buffer layer samples in terms of decoupling and integrity of the transformed graphene layer. The decoupling effect is demonstrated by ARPES measurements showing a graphene-like π band. XPS shows whether the oxidation takes place in the buffer layer or at the interface. Raman spectroscopy is well suited to investigate oxygen induced defects in graphene-like material. © (2012) Trans Tech Publications.


FAU-Autoren / FAU-Herausgeber

Fromm, Felix
Lehrstuhl für Laserphysik
Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Koch, Roland
Naturwissenschaftliche Fakultät
Ostler, Markus
Lehrstuhl für Laserphysik
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik
Speck, Florian
Naturwissenschaftliche Fakultät


Autor(en) der externen Einrichtung(en)
Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI)


Zitierweisen

APA:
Ostler, M., Koch, R., Speck, F., Fromm, F., Vita, H., Hundhausen, M.,... Seyller, T. (2012). Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation. Materials Science Forum, 717-720, 649. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.649

MLA:
Ostler, Markus, et al. "Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation." Materials Science Forum 717-720 (2012): 649.

BibTeX: 

Zuletzt aktualisiert 2018-07-08 um 04:25