Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy

Journal article


Publication Details

Author(s): Röhrl J, Hundhausen M, Speck F, Seyller T
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2010
Volume: 645-648
Pages range: 603
ISSN: 0255-5476
eISSN: 1662-9752


Abstract

The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers. We measured the phonon frequencies by Raman spectroscopy and compare the results between epitaxial layers fabricated by high temperature annealing and by hydrogen intercalation of the covalently bound graphene layer of the 6√3 × 6√3 reconstructed SiC surface. Only the latter graphene layer shows tensile strain, which can partly be explained by lattice mismatch between substrate and epitaxial graphene. © (2010) Trans Tech Publications.


FAU Authors / FAU Editors

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik
Speck, Florian
Naturwissenschaftliche Fakultät


Additional Organisation
Exzellenz-Cluster Engineering of Advanced Materials


Research Fields

B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials


How to cite

APA:
Röhrl, J., Hundhausen, M., Speck, F., & Seyller, T. (2010). Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy. Materials Science Forum, 645-648, 603. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.603

MLA:
Röhrl, Jonas, et al. "Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy." Materials Science Forum 645-648 (2010): 603.

BibTeX: 

Last updated on 2018-07-08 at 03:38