Ristein J, Ley L (2004)
Publication Type: Journal article
Publication year: 2004
Publisher: Electrochemical Society
Book Volume: 151
Pages Range: E315
DOI: 10.1149/1.1785797
Intrinsic diamond with a bandgap of 5.4 eV exhibits a surface conductivity (SC) of the order of 10-5 Ω-1 when terminated by hydrogen. This conductivity is carried by a hole-accumulation layer close to the surface with an areal carrier concentration of about 1013 cm -2, and it has already been utilized for a unique kind of field effect transistor [H. Kawarada, Surf. Sci. Rep., 26, 205 (1996)]. Although the microscopic doping mechanism is still under debate. Based on the results of a variety of surface-sensitive experiments we propose a new surface-transfer doping mechanism by which electron transfer from the valence band to adsorbed, hydrated ionic species at the surface creates the holes for the surface conductivity. In order to draw a complete picture of the surface conductivity concepts from surface and semiconductor physics as well as electrochemistry have to be adopted. © 2004 The Electrochemical Society. All rights reserved.
APA:
Ristein, J., & Ley, L. (2004). Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond. Journal of The Electrochemical Society, 151, E315. https://doi.org/10.1149/1.1785797
MLA:
Ristein, Jürgen, and Lothar Ley. "Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond." Journal of The Electrochemical Society 151 (2004): E315.
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