Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond
Beitrag in einer Fachzeitschrift
Details zur Publikation
Autorinnen und Autoren: Ristein J, Ley L
Zeitschrift: → Journal of the Electrochemical Society |
Verlag: Electrochemical Society
Jahr der Veröffentlichung: 2004
Band: 151
Seitenbereich: E315
ISSN: 0013-4651
Abstract
Intrinsic diamond with a bandgap of 5.4 eV exhibits a surface conductivity (SC) of the order of 10-5 Ω-1 when terminated by hydrogen. This conductivity is carried by a hole-accumulation layer close to the surface with an areal carrier concentration of about 1013 cm -2, and it has already been utilized for a unique kind of field effect transistor [H. Kawarada, Surf. Sci. Rep., 26, 205 (1996)]. Although the microscopic doping mechanism is still under debate. Based on the results of a variety of surface-sensitive experiments we propose a new surface-transfer doping mechanism by which electron transfer from the valence band to adsorbed, hydrated ionic species at the surface creates the holes for the surface conductivity. In order to draw a complete picture of the surface conductivity concepts from surface and semiconductor physics as well as electrochemistry have to be adopted. © 2004 The Electrochemical Society. All rights reserved.
FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber
| | | Naturwissenschaftliche Fakultät |
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| Ristein, Jürgen apl. Prof. Dr. |
| | Lehrstuhl für Laserphysik |
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