Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J, Ley L
Zeitschrift: Journal of the Electrochemical Society
Verlag: Electrochemical Society
Jahr der Veröffentlichung: 2004
Band: 151
Seitenbereich: E315
ISSN: 0013-4651


Abstract

Intrinsic diamond with a bandgap of 5.4 eV exhibits a surface conductivity (SC) of the order of 10-5 Ω-1 when terminated by hydrogen. This conductivity is carried by a hole-accumulation layer close to the surface with an areal carrier concentration of about 1013 cm -2, and it has already been utilized for a unique kind of field effect transistor [H. Kawarada, Surf. Sci. Rep., 26, 205 (1996)]. Although the microscopic doping mechanism is still under debate. Based on the results of a variety of surface-sensitive experiments we propose a new surface-transfer doping mechanism by which electron transfer from the valence band to adsorbed, hydrated ionic species at the surface creates the holes for the surface conductivity. In order to draw a complete picture of the surface conductivity concepts from surface and semiconductor physics as well as electrochemistry have to be adopted. © 2004 The Electrochemical Society. All rights reserved.


FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Ristein, Jürgen apl. Prof. Dr.
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 11:23