Bänsch E, Davis D, Langmach H, Miller W (2004)
Publication Type: Journal article, Original article
Publication year: 2004
Publisher: Elsevier
Book Volume: 266
Pages Range: 60-66
Journal Issue: 1-3
DOI: 10.1016/j.jcrysgro.2004.02.030
Axisymmetric and 3D calculations of melt flow have been performed for a configuration used at the vapour-pressure-controlled Czochalski growth of GaAs single crystals. Thermal boundary conditions were adapted from a global simulation of the temperature field. The axisymmetric calculations with the code NAVIER confirmed the ones previously perfomed with FIDAP™. The 3D calculations showed that the flow exhibits an asymmetric transient behaviour beyond a certain critical Reynolds number. © 2004 Elsevier B.V. All rights reserved.
APA:
Bänsch, E., Davis, D., Langmach, H., & Miller, W. (2004). Axisymmetric and 3D Calculations of Melt Flow During VCz Growth. Journal of Crystal Growth, 266(1-3), 60-66. https://dx.doi.org/10.1016/j.jcrysgro.2004.02.030
MLA:
Bänsch, Eberhard, et al. "Axisymmetric and 3D Calculations of Melt Flow During VCz Growth." Journal of Crystal Growth 266.1-3 (2004): 60-66.
BibTeX: Download