Investigation of mass transport during PVT growth of SiC by 13C labelling of source material

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Hundhausen M, Winnacker A, Ley L
Zeitschrift: Journal of Crystal Growth
Verlag: Elsevier
Jahr der Veröffentlichung: 2003
Band: 258
Seitenbereich: 261
ISSN: 0022-0248


Abstract

We have investigated experimentally mass transport during physical vapor transport growth of silicon carbide (SiC). 13C was used as trace in order to determine mass transport paths inside the SiC source material as well as inside the gas room. The 13 C concentration inside the SiC crystal, SiC source material and parts of the graphite growth cell was measured using micro-Raman spectroscopy and secondary ion mass spectroscopy. The SiC growth process was monitored using digital X-ray imaging. The presented method for the first time provides experimental access to mass transport which is of particular interest (i) for fundamental investigations, and (ii) for the verification of numerical modeling tools which are currently widely in use for the improvement of the SiC growth process. © 2003 Elsevier B.V. All rights reserved.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Winnacker, Albrecht Prof. Dr.
Technische Fakultät

Zuletzt aktualisiert 2018-09-08 um 10:38