Ristein J, Ley L (2001)
Publication Type: Journal article
Publication year: 2001
Publisher: Trans Tech Publications
Book Volume: 353-356
Pages Range: 223
A hydrogen termination of the (0001) and (0001̄) 6H-SiC surfaces is achieved by a thermal treatment in ultra pure hydrogen. This results in unreconstructed and quasi-bulk terminated surfaces as demonstrated by a (1×1) LEED patterns which are stable in air. Photoelectron spectra show only bulk related Si 2p and C 1s lines and give no indication of any contamination. Using Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflection (ATR) configuration Si-H stretching modes around 2130 cm-1 have been observed in p-polarization but not in s-polarization. This indicates that the Si-H bonds are oriented perpendicular to the surface. Electronically, hydrogenation leads to a complete passivation of the surface with no pinning of the Fermi level. After annealing at 800°C in UHV the hydrogen completely desorbs and the surface periodicity changes from (1×1) to (√3×√3)R30°. The photoemission spectra of this (√3×√3)R30° structure are characteristic for a surface with Si adatoms in T
APA:
Ristein, J., & Ley, L. (2001). Preparation and characterization of hydrogen terminated 6H-SiC. Materials Science Forum, 353-356, 223.
MLA:
Ristein, Jürgen, and Lothar Ley. "Preparation and characterization of hydrogen terminated 6H-SiC." Materials Science Forum 353-356 (2001): 223.
BibTeX: Download