Preparation and characterization of hydrogen terminated 6H-SiC

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Ristein J, Ley L
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Jahr der Veröffentlichung: 2001
Band: 353-356
Seitenbereich: 223
ISSN: 0255-5476
eISSN: 1662-9752


Abstract

A hydrogen termination of the (0001) and (0001̄) 6H-SiC surfaces is achieved by a thermal treatment in ultra pure hydrogen. This results in unreconstructed and quasi-bulk terminated surfaces as demonstrated by a (1×1) LEED patterns which are stable in air. Photoelectron spectra show only bulk related Si 2p and C 1s lines and give no indication of any contamination. Using Fourier transform infrared spectroscopy (FTIR) in the attenuated total reflection (ATR) configuration Si-H stretching modes around 2130 cm-1 have been observed in p-polarization but not in s-polarization. This indicates that the Si-H bonds are oriented perpendicular to the surface. Electronically, hydrogenation leads to a complete passivation of the surface with no pinning of the Fermi level. After annealing at 800°C in UHV the hydrogen completely desorbs and the surface periodicity changes from (1×1) to (√3×√3)R30°. The photoemission spectra of this (√3×√3)R30° structure are characteristic for a surface with Si adatoms in T4 configuration which is formed via a disproportionation of SiC at the surface.


FAU-Autoren / FAU-Herausgeber

Ley, Lothar Prof. Dr.
Ristein, Jürgen apl. Prof. Dr.
Naturwissenschaftliche Fakultät
Lehrstuhl für Laserphysik

Zuletzt aktualisiert 2018-09-08 um 06:08