Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC

Steeds JW, Sullivan W, Furkert SA, Evans GA, Wellmann P (2008)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2008

Journal

Physical Review B American Physical Society

Publisher: American Physical Society

Book Volume: 77

Article Number: 195203

Journal Issue: 19

DOI: 10.1103/PhysRevB.77.195203

Abstract

This paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at temperatures up to 1300 degrees C. Identification was achieved by their formation and annealing characteristics, by the energies of their local vibrational modes, by the nature of their splitting in (13)C isotope enriched samples, and by comparison with published results of ab initio local density approximation calculations. Four related but different forms of this defect have been predicted, two with S = 0 and two with S = 1, and their calculated properties are consistent with the experimental results presented here. The excitation processes for the optical centers within the irradiated region are quite unusual. For a 488 nm laser excitation, both spin states of the defect are observed by up-conversion. For a 325 nm excitation, the optical centers are only observed at the periphery of the high-dose irradiatedregions after the sample has been exposed to an intense 325 nm beam. In this case, the optical centers are mainly in the S=0 state. The centers are eliminated by annealing in the range of 800-950 degrees C.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

University of Bristol GB United Kingdom (GB)

How to cite

APA:

Steeds, J.W., Sullivan, W., Furkert, S.A., Evans, G.A., & Wellmann, P. (2008). Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC. Physical Review B, 77(19). https://doi.org/10.1103/PhysRevB.77.195203

MLA:

Steeds, J. W., et al. "Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC." Physical Review B 77.19 (2008).

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