Thermal Expansion Coefficients of 6H Silicon Carbide

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autor(en): Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A
Zeitschrift: Materials Science Forum
Jahr der Veröffentlichung: 2009
Band: 600-603
Tagungsband: Materials Science Forum (Volumes 600-603)
Seitenbereich: 517-520
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


The thermal expansion of 6H Silicon Carbide with different dopant concentrations of aluminum and nitrogen was determined by lattice parameter measurements at temperatures from 300 K to 1575 K. All samples have a volume of at least 6 x 6 x 6 mm(3) to ensure that bulk properties are measured. The measurements were performed with a triple axis diffractometer with high energy x-rays with a photon energy of 60 keV. The values for the thermal expansion coefficients along the a- and c-direction, alpha(11) and alpha(33), are in the range of 3.10(-6) K(-1) for 300 K and 6.10(-6) K(-1) for 1550 K. At high temperatures the coefficients for aluminum doped samples are approximately 0.5.10(-6) K(-1) lower than for the nitrogen doped crystal. alpha(11) and alpha(33) appear to be isotropic.

FAU-Autoren / FAU-Herausgeber

Hens, Philip
Graduiertenzentrum der FAU
Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Stockmeier, M., Sakwe, A., Hens, P., Wellmann, P., Hock, R., & Magerl, A. (2009). Thermal Expansion Coefficients of 6H Silicon Carbide. Materials Science Forum, 600-603, 517-520.

Stockmeier, Matthias, et al. "Thermal Expansion Coefficients of 6H Silicon Carbide." Materials Science Forum 600-603 (2009): 517-520.


Zuletzt aktualisiert 2018-13-08 um 13:53