Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers

Karpinski H, Sakwe A, Fried MJ, Bänsch E, Wellmann P (2011)

Publication Type: Journal article, Original article

Publication year: 2011

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 679-680

Pages Range: 277-281

DOI: 10.4028/www.scientific.net/MSF.679-680.277

Abstract

The determination of dislocation density and in particular the dislocation distribution in SiC wafers is of particular interest for SiC crystal growth development and production. We present an image recognition tool allowing the wafer analysis with specific needs for SiC. In the first stage of expansion, micropipes are selected and counted from SiC wafers that have been etched by KOH.

Authors with CRIS profile

Eberhard Bänsch Lehrstuhl für Angewandte Mathematik (Wissenschaftliches Rechnen) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

How to cite

APA:

Karpinski, H., Sakwe, A., Fried, M.J., Bänsch, E., & Wellmann, P. (2011). Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers. Materials Science Forum, 679-680, 277-281. https://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.277

MLA:

Karpinski, Harald, et al. "Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers." Materials Science Forum 679-680 (2011): 277-281.

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