Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
Frey L, Hürner A, Bauer A, Erlbacher T (2012)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2012
Journal
Book Volume: 75
Pages Range: 33-36
DOI: 10.1016/j.sse.2012.05.004
Abstract
Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm . Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability. © 2012 Elsevier Ltd. All rights reserved.
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Germany (DE)How to cite
APA:
Frey, L., Hürner, A., Bauer, A., & Erlbacher, T. (2012). Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications. Solid-State Electronics, 75, 33-36. https://doi.org/10.1016/j.sse.2012.05.004
MLA:
Frey, Lothar, et al. "Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications." Solid-State Electronics 75 (2012): 33-36.
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