Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications

Henkel K, Lazareva I, Mandal D, Paloumpa J, Koval Y, Müller P (2009)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2009

Journal

Journal of Vacuum Science & Technology B American Institute of Physics (AIP)

Book Volume: 27

Pages Range: 504-507

Journal Issue: 1

DOI: 10.1116/1.3043476

Abstract

Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is a ferroelectric polymer and a candidate for the application in a ferroelectric field effect transistor, which is considered as a nonvolatile and nondestructive readout memory cell. In this contribution the authors focus on metal/ferroelectric/insulator/semiconductor capacitor structures with P[VDF/TrFE] as ferroelectric layer. Measuring the capacitance of Al/P [VDF/TrFE] / SiO2 /Si stacks in dependence of the applied bias and analyzing the oxide capacitance in dependence of the thickness of the ferroelectric layer, they observe a formation of an interfacial nonferroelectric layer. This layer is responsible for reduced values of polarization profound for thinner P[VDF/TrFE] layers in this system. Capacitance-time measurements at such stacks show the possibility to distinguish between a higher and a lower capacitance state for more than 5 days. Long-time measurements revealed imprint and fatigue-like behavior. © 2009 American Vacuum Society.

Authors with CRIS profile

Irina Lazareva Lehrstuhl für Experimentalphysik Yury Koval Lehrstuhl für Experimentalphysik Paul Müller Lehrstuhl für Experimentalphysik

Involved external institutions

Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE)

How to cite

APA:

Henkel, K., Lazareva, I., Mandal, D., Paloumpa, J., Koval, Y., & Müller, P. (2009). Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications. Journal of Vacuum Science & Technology B, 27(1), 504-507. https://dx.doi.org/10.1116/1.3043476

MLA:

Henkel, Karsten, et al. "Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications." Journal of Vacuum Science & Technology B 27.1 (2009): 504-507.

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