The build-up of strain fields in Czochralski-Si observed in real time by high energy x-ray diffraction

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Details zur Publikation

Autor(en): Hock R
Jahr der Veröffentlichung: 2005
Band: 108-109
Seitenbereich: 631-636
ISSN: 1012-0394
eISSN: 1662-9779


The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200 degrees C and for process times up to 70 hours has been observed in real time by high energy x-ray diffraction. Five different processes are distinguished in the temperature evolution of the intensity and of the rocking width of the silicon 220-reflection. These features are attributed to different precipitation mechanisms. A fit to part of the data with a diffusion limited precipitation model leads to an activation energy for oxygen diffusion in silicon of 2.2 eV in the temperature range from 700 degrees C to 950 degrees C.

FAU-Autoren / FAU-Herausgeber

Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik

Zuletzt aktualisiert 2018-10-08 um 16:08