Quantum oscillations and quantum Hall effect in epitaxial graphene

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autorinnen und Autoren: Jobst J, Waldmann D, Speck F, Hirner R, Maude D, Seyller T, Weber HB
Zeitschrift: Physical Review B
Verlag: American Physical Society
Jahr der Veröffentlichung: 2010
Band: 81
Heftnummer: 19
ISSN: 1098-0121


We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge-carrier density, mobility, conductivity, and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size. The temperature dependence of the conductance indicates a rather strong coupling to the SiC substrate. An analysis of the Shubnikov-de Haas effect yields the Landau-level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially and the graphenelike quantum Hall effect occurs.

FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Jobst, Johannes
Lehrstuhl für Angewandte Physik
Seyller, Thomas PD Dr.
Naturwissenschaftliche Fakultät
Speck, Florian
Naturwissenschaftliche Fakultät
Waldmann, Daniel
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik

Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


B Nanoelectronic Materials
Exzellenz-Cluster Engineering of Advanced Materials


Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D., Seyller, T., & Weber, H.B. (2010). Quantum oscillations and quantum Hall effect in epitaxial graphene. Physical Review B, 81(19). https://dx.doi.org/10.1103/PhysRevB.81.195434

Jobst, Johannes, et al. "Quantum oscillations and quantum Hall effect in epitaxial graphene." Physical Review B 81.19 (2010).


Zuletzt aktualisiert 2018-10-08 um 22:55