Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

Heilmann M, Munshi AM, Sarau G, Göbelt M, Tessarek C, Fauske VT, van Helvoort ATJ, Yang J, Latzel M, Hoffmann B, Conibeer G, Weman H, Christiansen S, Hoffmann B (2016)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

Publisher: American Chemical Society

Book Volume: 16

Pages Range: 3524-3532

Journal Issue: 6

DOI: 10.1021/acs.nanolett.6b00484

Abstract

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

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How to cite

APA:

Heilmann, M., Munshi, A.M., Sarau, G., Göbelt, M., Tessarek, C., Fauske, V.T.,... Hoffmann, B. (2016). Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer. Nano Letters, 16(6), 3524-3532. https://dx.doi.org/10.1021/acs.nanolett.6b00484

MLA:

Heilmann, Martin, et al. "Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer." Nano Letters 16.6 (2016): 3524-3532.

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