Fullerene sensitized silicon for near- to mid-infrared light detection

Matt GJ, Fromherz T, Bednorz M, Zamiri S, Goncalves G, Lungenschmied C, Meissner D, Sitter H, Sariciftci NS, Brabec C, Bauer G (2010)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2010

Journal

Advanced Materials Wiley-VCH Verlag

Book Volume: 22

Pages Range: 647-650

Journal Issue: 5

DOI: 10.1002/adma.200901383

Abstract

A novel light-sensing scheme based on a silicon/fullerene-derivative heterojunction allows optoelectronic detection in the near- to mid-infrared (IR), which is fully compatible with complementary metal oxide semiconductor (CMOS) technology. Although silicon and the fullerene derivative do not absorb in the IR, a heterojunction of these materials absorbs and generates a photocurrent (PC) in the near- to mid-IR, presumably caused by an interfacial absorption mechanism. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Authors with CRIS profile

Gebhard Matt
Christoph Brabec Institute Materials for Electronics and Energy Technology (i-MEET)

Involved external institutions

Johannes Kepler Universität (JKU) Linz AT Austria (AT) École Nationale Supérieure de Chimie, de Biologie et de Physique FR France (FR) Konarka Austria Forschungs und Entwicklungs GmbH AT Austria (AT)

How to cite

APA:

Matt, G.J., Fromherz, T., Bednorz, M., Zamiri, S., Goncalves, G., Lungenschmied, C.,... Bauer, G. (2010). Fullerene sensitized silicon for near- to mid-infrared light detection. Advanced Materials, 22(5), 647-650. https://doi.org/10.1002/adma.200901383

MLA:

Matt, Gebhard J., et al. "Fullerene sensitized silicon for near- to mid-infrared light detection." Advanced Materials 22.5 (2010): 647-650.

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