Boubekeur H, Höpfner J, Mikolajick T, Dehm C, Frey L, Ryssel H (2000)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2000
Publisher: Electrochemical Soc Inc
City/Town: Pennington, NJ, United States
Book Volume: 147
Pages Range: 4297-4300
Journal Issue: 11
DOI: 10.1149/1.1394057
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) were used to investigate the surface of highly oriented pyrolytic graphite (HOPG) irradiated with 209 MeV Kr or 830 MeV U ions. The density of hillocks found on samples irradiated by Kr and U ions indicates synergism of electronic and nuclear stopping processes. Carbon nanotubes (CNTs) were found on all of the investigated samples, STM images show an atomic arrangement identical with that of graphite. AFM revealed sputtering craters from which emerge CNTs, the vibration of some CNTs was observed.
APA:
Boubekeur, H., Höpfner, J., Mikolajick, T., Dehm, C., Frey, L., & Ryssel, H. (2000). Aspects of barium contamination in high dielectric dynamic random access memories. Journal of The Electrochemical Society, 147(11), 4297-4300. https://doi.org/10.1149/1.1394057
MLA:
Boubekeur, H., et al. "Aspects of barium contamination in high dielectric dynamic random access memories." Journal of The Electrochemical Society 147.11 (2000): 4297-4300.
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