Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks
Fet A, Haeublein V, Bauer AJ, Ryssel H, Frey L (2011)
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2011
Journal
Publisher: AVS Science and Technology Society
Book Volume: 29
Journal Issue: 1
DOI: 10.1116/1.3521471
Abstract
The instability of the p-type metal effective work function of high-k/metal gate metal-oxide-semiconductor stacks after high temperature treatment results in device threshold voltage shifts and is one of the big challenges for the gate-first integration of high-k dielectrics in the future complementary metal-oxide semiconductor process flow. The exact cause of this instability is a subject of intense debate. In this article, it is shown that by implanting the gate stack with a fluorine dose of 1015 cm$-$2, it is possible to achieve an appropriate silicon valence band-edge effective work function of 5.1 eV for p-type metal-oxide-semiconductor devices. It is also shown that the fluorine doping can be accomplished not only with F+, but also with BF2+ ions. The influence of the implantation energy on the obtained effective work function is demonstrated and discussed. The origin of the induced shift is also discussed. Leakage current measurements show that the leakage properties of high-k stacks are not worsened by F implantation, while the implantation of BF2 slightly affects the leakage currents.
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Germany (DE)How to cite
APA:
Fet, A., Haeublein, V., Bauer, A.J., Ryssel, H., & Frey, L. (2011). Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 29(1). https://doi.org/10.1116/1.3521471
MLA:
Fet, A., et al. "Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29.1 (2011).
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