Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs

Strenger C, Uhnevionak V, Mortet V, Ortiz G, Erlbacher T, Burenkov A, Bauer A, Cristiano F, Bedel-Pereira E, Pichler P, Ryssel H, Frey L (2014)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2014

Publisher: Trans Tech Publications Ltd

Pages Range: 583-586

Conference Proceedings Title: Silicon Carbide and Related Materials 2013

Event location: Miyazaki

ISBN: 9783038350101

DOI: 10.4028/www.scientific.net/MSF.778-780.583

Authors with CRIS profile

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) Germany (DE) Hasselt University / Universiteit Hasselt Belgium (BE)

How to cite

APA:

Strenger, C., Uhnevionak, V., Mortet, V., Ortiz, G., Erlbacher, T., Burenkov, A.,... Frey, L. (2014). Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs. In Silicon Carbide and Related Materials 2013 (pp. 583-586). Miyazaki: Trans Tech Publications Ltd.

MLA:

Strenger, Christian, et al. "Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs." Proceedings of the 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki Trans Tech Publications Ltd, 2014. 583-586.

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