Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices

Beitrag bei einer Tagung
(Konferenzbeitrag)


Details zur Publikation

Autor(en): März M, Endruschat A, Heckel T, Gerstner H, Joffe C, Eckardt B
Jahr der Veröffentlichung: 2017
Sprache: Englisch


Abstract


This paper presents a procedure to acquire precise measurement data of the output characteristics with a custom-made setup. In comparison to datasheets and common curve tracer measurements, the measurement range is extended and the accuracy improved. After deriving the theoretical minimal switching energy for semiconductor switches in a half-bridge configuration, possible operating points of the latest semi­conductors are calculated with the measurement data. Based on these calculations, a comparison of different technologies and materials is made regarding their potential in currently available switches.



FAU-Autoren / FAU-Herausgeber

März, Martin Prof. Dr.
Lehrstuhl für Leistungselektronik


Autor(en) der externen Einrichtung(en)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


Zitierweisen

APA:
März, M., Endruschat, A., Heckel, T., Gerstner, H., Joffe, C., & Eckardt, B. (2017). Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices. Albuquerque, NM, US.

MLA:
März, Martin, et al. "Application-Related Characterization and Theoretical Potential of Wide-Bandgap Devices." Proceedings of the 2017 IEEE WiPDA, Albuquerque, NM 2017.

BibTeX: 

Zuletzt aktualisiert 2018-10-08 um 21:39