Electrical detection of the spin reorientation transition in antiferromagnetic TmFe O3 thin films by spin Hall magnetoresistance
Becker S, Ross A, Lebrun R, Baldrati L, Ding S, Schreiber F, Maccherozzi F, Backes D, Klaeui M, Jakob G (2021)
Publication Type: Journal article
Publication year: 2021
Journal
Book Volume: 103
Article Number: 024423
Journal Issue: 2
DOI: 10.1103/PhysRevB.103.024423
Abstract
TmFeO3 (TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic c axis (below 82 K) to the a axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all-electrical spin Hall magnetoresistance, in good agreement for the temperature range where the SRT occurs in bulk crystals. Our results demonstrate that one can electrically detect the SRT in insulators.
Involved external institutions
Germany (DE)
United Kingdom (GB)How to cite
APA:
Becker, S., Ross, A., Lebrun, R., Baldrati, L., Ding, S., Schreiber, F.,... Jakob, G. (2021). Electrical detection of the spin reorientation transition in antiferromagnetic TmFe O3 thin films by spin Hall magnetoresistance. Physical Review B, 103(2). https://doi.org/10.1103/PhysRevB.103.024423
MLA:
Becker, Sven, et al. "Electrical detection of the spin reorientation transition in antiferromagnetic TmFe O3 thin films by spin Hall magnetoresistance." Physical Review B 103.2 (2021).
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