Mechanisms of ohmic contact formation of Ti/Al-based metal stacks on p-doped 4H-SiC
Kocher M, Rommel M, Michalowski P, Erlbacher T (2022)
Publication Type: Journal article
Publication year: 2022
Journal
Book Volume: 15
Article Number: 50
Journal Issue: 1
DOI: 10.3390/ma15010050
Abstract
Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully under-stood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.
Involved external institutions
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
Warsaw University of Technology / Politechnika Warszawska
Poland (PL)
Germany (DE)
Warsaw University of Technology / Politechnika Warszawska
Poland (PL)
How to cite
APA:
Kocher, M., Rommel, M., Michalowski, P., & Erlbacher, T. (2022). Mechanisms of ohmic contact formation of Ti/Al-based metal stacks on p-doped 4H-SiC. Materials, 15(1). https://doi.org/10.3390/ma15010050
MLA:
Kocher, Matthias, et al. "Mechanisms of ohmic contact formation of Ti/Al-based metal stacks on p-doped 4H-SiC." Materials 15.1 (2022).
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