Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model

Journal article

Publication Details

Author(s): Sayyad S, Tsuji N, Vaezi A, Capone M, Eckstein M, Aoki H
Journal: Physical Review B
Publication year: 2019
Volume: 99
Journal issue: 16
ISSN: 2469-9950


We study the dynamical behavior of doped electronic systems subject to a global ramp of the repulsive Hubbard interaction. We start with formulating a real-time generalization of the fluctuation-exchange approximation. Implementing this numerically, we investigate the weak-coupling regime of the Hubbard model both in the electron-doped and hole-doped regimes. The results show that both local and nonlocal (momentum-dependent) observables evolve toward a thermal state, although the temperature of the final state depends on the ramp duration and the band filling. We further reveal a momentum-dependent relaxation rate of the distribution function in doped systems and trace back its physical origin to the anisotropic self-energies in the momentum space.

FAU Authors / FAU Editors

Eckstein, Martin Prof. Dr.
Lehrstuhl für Theoretische Festkörperphysik

External institutions with authors

National Institute of Advanced Industrial Science and Technology / 産業技術総合研究所 (AIST)
Riken / 理研
Scuola Internazionale Superiore di Studi Avanzati (SISSA)
Stanford University
University of Tokyo

How to cite

Sayyad, S., Tsuji, N., Vaezi, A., Capone, M., Eckstein, M., & Aoki, H. (2019). Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model. Physical Review B, 99(16).

Sayyad, Sharareh, et al. "Momentum-dependent relaxation dynamics of the doped repulsive Hubbard model." Physical Review B 99.16 (2019).


Last updated on 2019-28-05 at 15:08

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