Home Publications Research Grants Inventions & Patents Awards Additional Research Activities Faculties & Institutions Research Areas

Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface

Frey L, Stoemenos J, Schork R, Nejim A, Hemment P (1997)

---

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1997

Journal

Publisher: Electrochemical Society Inc.

Book Volume: 144

Pages Range: 4314-4320

Journal Issue: 12

DOI: 10.1149/1.1838184

Authors with CRIS profile

How to cite

APA:

Frey, L., Stoemenos, J., Schork, R., Nejim, A., & Hemment, P. (1997). Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface. Journal of The Electrochemical Society, 144(12), 4314-4320. https://doi.org/10.1149/1.1838184

MLA:

Frey, Lothar, et al. "Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface." Journal of The Electrochemical Society 144.12 (1997): 4314-4320.

BibTeX: Download