Monolayer black phosphorus by sequential wet-chemical surface oxidation

Journal article
(Original article)

Publication Details

Author(s): Wild S, Lloret V, Vega-Mayoral V, Vella D, Nuin E, Siebert M, Kolesnik-Gray M, Loeffler M, Mayrhofer KJJ, Gadermaier C, Krstic V, Hauke F, Abellán G, Hirsch A
Journal: RSC Advances
Publication year: 2019
Volume: 9
Journal issue: 7
Pages range: 3570-3576
ISSN: 2046-2069


We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.

FAU Authors / FAU Editors

Hauke, Frank Dr.
Zentralinstitut für Neue Materialien und Prozesstechnik
Hirsch, Andreas Prof. Dr.
Lehrstuhl für Organische Chemie II
Kolesnik-Gray, Maria Dr.
Lehrstuhl für Angewandte Physik
Krstic, Vojislav Prof. Dr.
Professur für Angewandte Physik
Siebert, Martin
Sonderforschungsbereich 953/2 Synthetische Kohlenstoffallotrope
Wild, Stefan
Sonderforschungsbereich 953/2 Synthetische Kohlenstoffallotrope

External institutions with authors

Forschungszentrum Jülich / Research Centre Jülich (FZJ)
Jožef Stefan Institute
Trinity College Dublin

How to cite

Wild, S., Lloret, V., Vega-Mayoral, V., Vella, D., Nuin, E., Siebert, M.,... Hirsch, A. (2019). Monolayer black phosphorus by sequential wet-chemical surface oxidation. RSC Advances, 9(7), 3570-3576.

Wild, Stefan, et al. "Monolayer black phosphorus by sequential wet-chemical surface oxidation." RSC Advances 9.7 (2019): 3570-3576.


Last updated on 2019-21-07 at 07:59