Monolayer black phosphorus by sequential wet-chemical surface oxidation

Journal article
(Original article)


Publication Details

Author(s): Wild S, Lloret V, Vega-Mayoral V, Vella D, Nuin E, Siebert M, Kolesnik-Gray M, Loeffler M, Mayrhofer KJJ, Gadermaier C, Krstic V, Hauke F, Abellan G, Hirsch A
Journal: RSC Advances
Publication year: 2019
Volume: 9
Journal issue: 7
Pages range: 3570-3576
ISSN: 2046-2069


Abstract

We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.


FAU Authors / FAU Editors

Hauke, Frank Dr.
Zentralinstitut für Neue Materialien und Prozesstechnik
Lehrstuhl für Angewandte Physik
Hirsch, Andreas Prof. Dr.
Krstic, Vojislav Prof. Dr.
Lehrstuhl für Organische Chemie II
Professur für Angewandte Physik
Kolesnik-Gray, Maria Dr.
Siebert, Martin
Sonderforschungsbereich 953/2 Synthetische Kohlenstoffallotrope
Wild, Stefan
Sonderforschungsbereich 953/2 Synthetische Kohlenstoffallotrope


External institutions
Forschungszentrum Jülich GmbH (FZJ)
Jožef Stefan Institute
Trinity College Dublin


How to cite

APA:
Wild, S., Lloret, V., Vega-Mayoral, V., Vella, D., Nuin, E., Siebert, M.,... Hirsch, A. (2019). Monolayer black phosphorus by sequential wet-chemical surface oxidation. RSC Advances, 9(7), 3570-3576. https://dx.doi.org/10.1039/c8ra09069f

MLA:
Wild, Stefan, et al. "Monolayer black phosphorus by sequential wet-chemical surface oxidation." RSC Advances 9.7 (2019): 3570-3576.

BibTeX: 

Last updated on 2019-10-03 at 13:08