Monolayer black phosphorus by sequential wet-chemical surface oxidation

Wild S, Lloret V, Vega-Mayoral V, Vella D, Nuin E, Siebert M, Kolesnik-Gray M, Loeffler M, Mayrhofer KJJ, Gadermaier C, Krstic V, Hauke F, Abellán G, Hirsch A (2019)


Publication Type: Journal article, Original article

Publication year: 2019

Journal

Book Volume: 9

Pages Range: 3570-3576

Journal Issue: 7

DOI: 10.1039/c8ra09069f

Abstract

We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness.

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APA:

Wild, S., Lloret, V., Vega-Mayoral, V., Vella, D., Nuin, E., Siebert, M.,... Hirsch, A. (2019). Monolayer black phosphorus by sequential wet-chemical surface oxidation. RSC Advances, 9(7), 3570-3576. https://doi.org/10.1039/c8ra09069f

MLA:

Wild, Stefan, et al. "Monolayer black phosphorus by sequential wet-chemical surface oxidation." RSC Advances 9.7 (2019): 3570-3576.

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