Back side ablation of SiC diodes using a q-switched NIR laser
Adelmann B, Hürner A, Roth GL, Hellmann R (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2015
Journal
Publisher: Japan Laser Processing Society
Book Volume: 10
Pages Range: 190-194
Journal Issue: 2
DOI: 10.2961/jlmn.2015.02.0016
Abstract
We study pulsed fiber laser back side ablation of silicon carbide diodes. With the objective to thin the SiC substrate thickness without damaging the semiconductor device or altering its electrical characteristics, we investigate the ablation characteristics of silicon carbide and determine the ablation threshold, rate and quality as well as the material composition at the ablated surface. Based on optimized process parameters, including track distance, laser repetition rate and scanning velocity, we micro structure the substrate of SiC diodes and compare its electrical characteristic to an unprocessed device. Our results prove that the typical diode characteristic and built-in voltage are not affected by the laser ablation process. Fiber laser back side ablation therefore offers a precise and efficient micro structuring approach for substrate thinning in silicon carbide technology.
Authors with CRIS profile
Benedikt Adelmann
Technische Fakultät
Andreas Hürner
Lehrstuhl für Elektronische Bauelemente
Gian-Luca Roth
Lehrstuhl für Elektronische Bauelemente
Involved external institutions
Germany (DE)How to cite
APA:
Adelmann, B., Hürner, A., Roth, G.-L., & Hellmann, R. (2015). Back side ablation of SiC diodes using a q-switched NIR laser. Journal of Laser Micro Nanoengineering, 10(2), 190-194. https://dx.doi.org/10.2961/jlmn.2015.02.0016
MLA:
Adelmann, Benedikt, et al. "Back side ablation of SiC diodes using a q-switched NIR laser." Journal of Laser Micro Nanoengineering 10.2 (2015): 190-194.
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