Electronic structure of Si(100) surfaces studied by two-photon photoemission

Journal article

Publication Details

Author(s): Kentsch C, Kutschera M, Weinelt M, Fauster T, Rohlfing M
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2002
Volume: 65
ISSN: 1098-0121


The electronic structure of the valence and conduction bands at the Si(100) surface has been studied by two-photon photoemission over a wide photon-energy range. The ionization energy was determined to 5.40+/-0.03 eV. The occupied surface state at Gamma is placed 0.15+/-0.06 below the valence-band maximum. Several other spectral features are assigned to transitions involving surface states and between bulk bands including backfolded bands due to the surface reconstruction. The moderate agreement between experimental data and band-structure calculations calls for an improved theoretical description of the two-photon photoemission process at semiconductor surfaces incorporating, e.g., a one-step model and excitonic effects.

FAU Authors / FAU Editors

Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik

External institutions with authors

Jacobs University Bremen gGmbH

How to cite

Kentsch, C., Kutschera, M., Weinelt, M., Fauster, T., & Rohlfing, M. (2002). Electronic structure of Si(100) surfaces studied by two-photon photoemission. Physical Review B, 65. https://dx.doi.org/10.1103/PhysRevB.65.035323

Kentsch, Carsten, et al. "Electronic structure of Si(100) surfaces studied by two-photon photoemission." Physical Review B 65 (2002).


Last updated on 2018-16-07 at 11:23