Nanoscale structure of Si/SiO2/organics interfaces

Journal article
(Original article)

Publication Details

Author(s): Steinrück HG, Schiener A, Schindler T, Will J, Magerl A, Konovalov O, Li Destri G, Seeck O, Mezger M, Haddad J, Deutsch M, Checco A, Ocko B
Journal: ACS nano
Publisher: American Chemical Society
Publication year: 2014
Volume: 8
Journal issue: 12
Pages range: 12676-12681
ISSN: 1936-0851
eISSN: 1936-086X
Language: English


X-ray reflectivity measurements of increasingly more complex interfaces involving silicon (001) substrates reveal the existence of a thin low-density layer intruding between the single-crystalline silicon and the amorphous native SiO terminating it. The importance of accounting for this layer in modeling silicon/liquid interfaces and silicon-supported monolayers is demonstrated by comparing fits of the measured reflectivity curves by models including and excluding this layer. The inclusion of this layer, with 6-8 missing electrons per silicon unit cell area, consistent with one missing oxygen atom whose bonds remain hydrogen passivated, is found to be particularly important for an accurate and high-resolution determination of the surface normal density profile from reflectivities spanning extended momentum transfer ranges, now measurable at modern third-generation synchrotron sources.

FAU Authors / FAU Editors

Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Schiener, Andreas
Lehrstuhl für Kristallographie und Strukturphysik
Schindler, Torben
Lehrstuhl für Kristallographie und Strukturphysik
Steinrück, Hans-Georg
Lehrstuhl für Kristallographie und Strukturphysik
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik

Additional Organisation
Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

External institutions with authors

Bar-Ilan University
Brookhaven National Laboratory
Deutsches Elektronen-Synchrotron DESY
European Synchrotron Radiation Facility (ESRF)
Max-Planck-Institut für Polymerforschung (MPI-P) / Max Planck Institute for Polymer Research

How to cite

Steinrück, H.-G., Schiener, A., Schindler, T., Will, J., Magerl, A., Konovalov, O.,... Ocko, B. (2014). Nanoscale structure of Si/SiO2/organics interfaces. ACS nano, 8(12), 12676-12681.

Steinrück, Hans-Georg, et al. "Nanoscale structure of Si/SiO2/organics interfaces." ACS nano 8.12 (2014): 12676-12681.


Last updated on 2019-29-05 at 16:18