Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Erlbacher T, Schwarzmann H, Bauer AJ, Doehler GH, Schreivogel M, Lutz T, Guillen FH, Graf J, Fix R, Frey L
Zeitschrift: Journal of Vacuum Science & Technology B
Verlag: A V S AMER INST PHYSICS
Jahr der Veröffentlichung: 2015
Band: 33
Heftnummer: 1
ISSN: 1071-1023


Abstract


The effect of mobile ions on electrical performance in ion-sensitive metal-oxide-semiconductor field effect transistor fabricated on 4H silicon carbide for the application as chemical fluid and gas sensors in harsh environments was investigated. The drift and diffusion of these mobile ions in the dielectric gate stack were identified as the source for a change in the sensor signal. The movement of the ions and the resulting electrical properties were successfully modeled using a novel drift-diffusion model implemented in TCAD simulation software. The diffusion coefficient and activation energy for drift and diffusion of sodium through an amorphous silicon nitride layer were estimated from these simulations. (C) 2014 American Vacuum Society.



FAU-Autoren / FAU-Herausgeber

Frey, Lothar Prof. Dr.
Lehrstuhl für Elektronische Bauelemente


Autor(en) der externen Einrichtung(en)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light
Robert Bosch GmbH


Zitierweisen

APA:
Erlbacher, T., Schwarzmann, H., Bauer, A.J., Doehler, G.H., Schreivogel, M., Lutz, T.,... Frey, L. (2015). Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors. Journal of Vacuum Science & Technology B, 33(1). https://dx.doi.org/10.1116/1.4903054

MLA:
Erlbacher, Tobias, et al. "Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors." Journal of Vacuum Science & Technology B 33.1 (2015).

BibTeX: 

Zuletzt aktualisiert 2018-10-08 um 22:31