Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autorinnen und Autoren: Straubinger T, Bickermann M, Grau M, Hofmann HD, Kadinski L, Müller G, Selder M, Wellmann P, Winnacker A
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Verlagsort: Switzerland
Jahr der Veröffentlichung: 2000
Band: 338-342
Tagungsband: Materials Science Forum (Volumes 338-342)
Seitenbereich: 39-42
ISSN: 0255-5476
eISSN: 1662-9752
Sprache: Englisch


Abstract


The thermal data used were determined from pyrometrical measurements on the top and bottom of the crucible during the experiments and were combined with simulations of the 2-dimensional heat transfer in the assembly. The latter allowed us to obtain the temperatures (source, crystal) inside the reaction chamber which were not assessable by direct measurements.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Bickermann, Matthias PD Dr.
Technische Fakultät
Müller, Georg Prof. Dr.
Technische Fakultät
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät


Zitierweisen

APA:
Straubinger, T., Bickermann, M., Grau, M., Hofmann, H.-D., Kadinski, L., Müller, G.,... Winnacker, A. (2000). Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions. Materials Science Forum, 338-342, 39-42. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.39

MLA:
Straubinger, Thomas, et al. "Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions." Materials Science Forum 338-342 (2000): 39-42.

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Zuletzt aktualisiert 2018-19-09 um 10:53