Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth

Selder M, Kadinski L, Durst F, Straubinger T, Hofmann HD, Wellmann P (2000)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2000

Journal

Publisher: Trans Tech Publications

City/Town: Switzerland

Book Volume: 338-342

Pages Range: 31-34

Conference Proceedings Title: Materials Science Forum (Volumes 338-342)

Event location: Research Triangle Park, North Carolina US

DOI: 10.4028/www.scientific.net/MSF.338-342.31

Abstract

Modeling results of a global heat and mass transfer analysis of the SIC bulk growth process in an inductively heated PVT reactor are presented. The modeling approach is summarized and its reliability is shown by comparing experimental data to simulation results. The temporal evolution of the temperature gradients at the crystal surface during the growth process is analyzed and related to the radial growth rate distribution. The species fluxes at the surface of the source are investigated.

Authors with CRIS profile

How to cite

APA:

Selder, M., Kadinski, L., Durst, F., Straubinger, T., Hofmann, H.-D., & Wellmann, P. (2000). Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth. Materials Science Forum, 338-342, 31-34. https://doi.org/10.4028/www.scientific.net/MSF.338-342.31

MLA:

Selder, Markus, et al. "Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth." Materials Science Forum 338-342 (2000): 31-34.

BibTeX: Download