FEM-based optimization of an inverse-magnetostrictive pressure sensor

Conference contribution

Publication Details

Author(s): Löffler M, Nierla M, Kadur M, Sutor A, Lerch R
Editor(s): AIP, IEEE
Publication year: 2016
Conference Proceedings Title: Abstract Book
Pages range: 440
Language: English


The global demand for MEMS pressure sensors is constantly increasing. Usually, the piezoresistive

or the capacitive effect is exploited in such devices. However, it has already been shown that

sensors based on the inverse-magnetostrictive (Villari) effect feature a remarkable sensitivity while

overcoming drawbacks of the established principles like temperature-instability and non-linearity. Although simulations are crucial for the further development and optimization, simulations

incorporating the magnetostrictive and the inverse-magnetostrictive effect in such devices have

been missing until now. In this contribution, we present an iterative FE-scheme using VSM-

measurements to consider the stress-dependent permeability of the magnetostrictive layers of such

sensors. With this approach, the dimensions of the single layers are optimized to achieve maximum


FAU Authors / FAU Editors

Lerch, Reinhard Prof. Dr.-Ing.
Lehrstuhl für Sensorik
Löffler, Michael
Lehrstuhl für Sensorik
Nierla, Michael
Lehrstuhl für Sensorik
Sutor, Alexander Dr.-Ing.
Lehrstuhl für Sensorik

How to cite

Löffler, M., Nierla, M., Kadur, M., Sutor, A., & Lerch, R. (2016). FEM-based optimization of an inverse-magnetostrictive pressure sensor. In AIP, IEEE (Eds.), Abstract Book (pp. 440). San Diego, CA, US.

Löffler, Michael, et al. "FEM-based optimization of an inverse-magnetostrictive pressure sensor." Proceedings of the MMM - Intermag Joint Conference, San Diego, CA Ed. AIP, IEEE, 2016. 440.


Last updated on 2018-01-09 at 07:09