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@inproceedings{faucris.114011964,
abstract = {The global demand for MEMS pressure sensors is constantly increasing. Usually, the piezoresistive
or the capacitive effect is exploited in such devices. However, it has already been shown that
sensors based on the inverse-magnetostrictive (Villari) effect feature a remarkable sensitivity while
overcoming drawbacks of the established principles like temperature-instability and non-linearity. Although simulations are crucial for the further development and optimization, simulations
incorporating the magnetostrictive and the inverse-magnetostrictive effect in such devices have
been missing until now. In this contribution, we present an iterative FE-scheme using VSM-
measurements to consider the stress-dependent permeability of the magnetostrictive layers of such
sensors. With this approach, the dimensions of the single layers are optimized to achieve maximum
sensitivity.},
author = {Löffler, Michael and Nierla, Michael and Kadur, Madlen and Sutor, Alexander and Lerch, Reinhard},
booktitle = {Abstract Book},
date = {2016-01-11/2016-01-15},
editor = {AIP, IEEE},
faupublication = {yes},
keywords = {Magnetostriction; inverse-magnetostrictive effect; Finite Element simulation; MEMS pressure sensor},
pages = {440},
peerreviewed = {unknown},
title = {{FEM}-based optimization of an inverse-magnetostrictive pressure sensor},
venue = {San Diego, CA},
year = {2016}
}