Photoelectron spectroscopy of molecular-beam epitaxially grown BeTe/ZnSe and BeTe/GaAs heterostructures
Nagelstraßer M, Dröge H, Fischer F, Litz T, Waag A, Landwehr G, Steinrück HP (1998)
Publication Type: Journal article
Publication year: 1998
Journal
Original Authors: Nagelstrasser M., Dröge H., Fischer F., Litz T., Waag A., Landwehr G., Steinrück H.-P.
Publisher: Elsevier
Pages Range: 173-177
DOI: 10.1016/S0022-0248(98)80316-3
Abstract
BeTe is a new material within the class of II-VI semiconductors with novel and interesting properties. It is well lattice matched to GaAs as well as ZnSe and therefore can be combined in superlattices with these materials. Using photoelectron spectroscopy we have investigated the valence-band offset (ΔE) of BeTe/ZnSe and BeTe/GaAs heterojunctions, grown by molecular-beam epitaxy (MBE). For the BeTe/ZnSe heterostructure with a Zn-rich interface, we measured a valence-band offset of 1.26 ± 0.15 eV and for the heterovalent BeTe/GaAs interface we determined a far smaller valence-band offset of -0.25 ± 0.15 eV. From UPS measurements for increasing layer thickness of BeTe on ZnSe we calculated the accumulation layer of BeTe with a Debye-length of 6 nm and a defect concentration of 4.10cm. © 1998 Elsevier Science B.V. All rights reserved.
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APA:
Nagelstraßer, M., Dröge, H., Fischer, F., Litz, T., Waag, A., Landwehr, G., & Steinrück, H.-P. (1998). Photoelectron spectroscopy of molecular-beam epitaxially grown BeTe/ZnSe and BeTe/GaAs heterostructures. Journal of Crystal Growth, 173-177. https://doi.org/10.1016/S0022-0248(98)80316-3
MLA:
Nagelstraßer, M., et al. "Photoelectron spectroscopy of molecular-beam epitaxially grown BeTe/ZnSe and BeTe/GaAs heterostructures." Journal of Crystal Growth (1998): 173-177.
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