Unoccupied topological states on bismuth chalcogenides

Journal article

Publication Details

Author(s): Niesner D, Fauster T, Eremeev SV, Menshchikova TV, Koroteev YM, Protogenov AP, Chulkov EV, Tereshchenko OE, Kokh KA, Alekperov O, Nadjafov A, Mamedov N
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2012
Volume: 86
ISSN: 1098-0121


The unoccupied part of the band structure of topological insulators Bi2TexSe3-x (x = 0,2,3) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly dispersing surface states are found at the center of the surface Brillouin zone at energies about 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in a spin-orbit-interaction-induced and inverted local energy gap. This inversion is insensitive to variation of electronic and structural parameters in Bi2Se3 and Bi2Te2Se. In Bi2Te3 small structural variations can change the character of the local energy gap, depending on whether or not an unoccupied Dirac state exists. Circular dichroism measurements confirm the expected spin texture. From these findings we assign the observed state to an unoccupied topological surface state.

FAU Authors / FAU Editors

Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik
Niesner, Daniel Dr.
Lehrstuhl für Festkörperphysik

External institutions with authors

Azərbaycan Milli Elmlər Akademiyası (AMEA) / Azerbaijan National Academy of Sciences
Donostia International Physics Center (DIPC)
National Research Tomsk State University
Russian Academy of Sciences / Росси́йская акаде́мия нау́к (RAS)

How to cite

Niesner, D., Fauster, T., Eremeev, S.V., Menshchikova, T.V., Koroteev, Y.M., Protogenov, A.P.,... Mamedov, N. (2012). Unoccupied topological states on bismuth chalcogenides. Physical Review B, 86.

Niesner, Daniel, et al. "Unoccupied topological states on bismuth chalcogenides." Physical Review B 86 (2012).


Last updated on 2018-11-08 at 02:54