Spin-split silicon states at step edges of Si(553)-Au

Journal article


Publication Details

Author(s): Biedermann K, Regensburger S, Fauster T, Himpsel FJ, Erwin SC
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2012
Volume: 85
ISSN: 1098-0121


Abstract


The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split silicon step-edge state predicted by density functional theory calculations. Two occupied bands can be associated with the bands calculated for nonpolarized step-edge atoms.



FAU Authors / FAU Editors

Biedermann, Kerstin
Lehrstuhl für Festkörperphysik
Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik
Regensburger, Stefan
Lehrstuhl für Angewandte Physik


How to cite

APA:
Biedermann, K., Regensburger, S., Fauster, T., Himpsel, F.J., & Erwin, S.C. (2012). Spin-split silicon states at step edges of Si(553)-Au. Physical Review B, 85. https://dx.doi.org/10.1103/PhysRevB.85.245413

MLA:
Biedermann, Kerstin, et al. "Spin-split silicon states at step edges of Si(553)-Au." Physical Review B 85 (2012).

BibTeX: 

Last updated on 2018-19-06 at 03:23