Spin-split silicon states at step edges of Si(553)-Au

Journal article

Publication Details

Author(s): Biedermann K, Regensburger S, Fauster T, Himpsel FJ, Erwin SC
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2012
Volume: 85
ISSN: 1098-0121


The quasi-one-dimensional Si(553)-Au surface is investigated with time-resolved two-photon photoemission and laser-based photoemission. Several occupied and unoccupied states inside and outside the bulk band gap of silicon were found near the center of the surface Brillouin zone. A nondispersing unoccupied state 0.62 eV above the Fermi level with a lifetime of 125 fs matches the spin-split silicon step-edge state predicted by density functional theory calculations. Two occupied bands can be associated with the bands calculated for nonpolarized step-edge atoms.

FAU Authors / FAU Editors

Biedermann, Kerstin
Lehrstuhl für Festkörperphysik
Fauster, Thomas Prof. Dr.
Lehrstuhl für Festkörperphysik
Regensburger, Stefan
Lehrstuhl für Angewandte Physik

How to cite

Biedermann, K., Regensburger, S., Fauster, T., Himpsel, F.J., & Erwin, S.C. (2012). Spin-split silicon states at step edges of Si(553)-Au. Physical Review B, 85. https://dx.doi.org/10.1103/PhysRevB.85.245413

Biedermann, Kerstin, et al. "Spin-split silicon states at step edges of Si(553)-Au." Physical Review B 85 (2012).


Last updated on 2018-19-06 at 03:23