Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT

Journal article
(Original article)


Publication Details

Author(s): Selder M, Kadinski L, Makarov Y, Durst F, Wellmann P, Straubinger T, Hofmann HD, Karpov S, Ramm M
Journal: Journal of Crystal Growth
Publisher: Elsevier
Publication year: 2000
Volume: 211
Journal issue: 1
Pages range: 333-338
ISSN: 0022-0248
Language: English


Abstract


A modeling approach for the numerical simulation of heat and mass transfer during SiC sublimation growth in inductively heated physical vapor transport (PVT) reactors is introduced. The physical model is based on the two-dimensional solution of the coupled differential equations describing mass conservation, momentum conservation, conjugate heat transfer including surface to surface radiation, multicomponent chemical species mass transfer and advective flow. The model also includes the Joule volume heat sources induced by the electromagnetic field. The evolution of the temperature profiles inside the crucible and of the crystallization front is studied. The radial temperature gradient at the crystal/gas interface causes strong radial non-uniformity of the growth rate and, in turn, influences the shape of the growing crystal. Results of calculations are compared to experimental observations to analyse the validity of the modeling approach. Both the computed growth rates, their temporal evolution and the shape of the growing crystal agree with experimental data.


FAU Authors / FAU Editors

Durst, Franz Prof. Dr.
Technische Fakultät
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

Ioffe Physical-Technical Institute / Физико-технический институт имени А. Ф. Иоффе РАН
Semiconductor Technology Research, Inc.
Soft-Impact, Ltd.


How to cite

APA:
Selder, M., Kadinski, L., Makarov, Y., Durst, F., Wellmann, P., Straubinger, T.,... Ramm, M. (2000). Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT. Journal of Crystal Growth, 211(1), 333-338. https://dx.doi.org/10.1016/S0022-0248(99)00853-2

MLA:
Selder, Markus, et al. "Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT." Journal of Crystal Growth 211.1 (2000): 333-338.

BibTeX: 

Last updated on 2018-19-09 at 10:38