Quantum oscillations and quantum Hall effect in epitaxial graphene

Journal article

Publication Details

Author(s): Jobst J, Waldmann D, Speck F, Hirner R, Maude D, Seyller T, Weber HB
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2010
Volume: 81
Journal issue: 19
ISSN: 1098-0121


We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge-carrier density, mobility, conductivity, and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size. The temperature dependence of the conductance indicates a rather strong coupling to the SiC substrate. An analysis of the Shubnikov-de Haas effect yields the Landau-level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially and the graphenelike quantum Hall effect occurs.

FAU Authors / FAU Editors

Jobst, Johannes
Lehrstuhl für Angewandte Physik
Seyller, Thomas PD Dr.
Naturwissenschaftliche Fakultät
Speck, Florian
Naturwissenschaftliche Fakultät
Waldmann, Daniel
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik

How to cite

Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D., Seyller, T., & Weber, H.B. (2010). Quantum oscillations and quantum Hall effect in epitaxial graphene. Physical Review B, 81(19). https://dx.doi.org/10.1103/PhysRevB.81.195434

Jobst, Johannes, et al. "Quantum oscillations and quantum Hall effect in epitaxial graphene." Physical Review B 81.19 (2010).


Last updated on 2018-09-06 at 17:23