Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces

Journal article
(Original article)


Publication Details

Author(s): Gleim T, Weinhardt L, Schmidt T, Fink R, Heske C, Umbach E, Hansen L, Landwehr G, Waag A, Fleszar A, Richter B, Ammon C, Probst M, Steinrück HP
Journal: Physical Review B
Publisher: American Physical Society
Publication year: 2003
Volume: 67
Journal issue: 20
Pages range: 2053151-2053156
ISSN: 0163-1829


Abstract


We have investigated the influence of As substrate passivation on the electronic level alignment of the heterovalent BeTe/Si(111) interface. Employing photoelectron spectroscopy, we have performed k-resolved measurements at selected excitation energies in the uv range to maximize the contribution from the F point for a correct determination of the valence band maximum. These results are compared with k-integrated data using a density-of-states function from density functional theory. For BeTe(100) and BeTe(111), we find a negligible influence of surface orientation on the position of the valence band maximum. The As passivation increases the valence band offset by 0.24 eV (±0.13 eV) compared to BeTe on an unpassivated Si substrate, thus leading to a significantly increased step in the valence band (0.37±0.13 eV). The results are discussed with respect to the barriers for electron and hole injection in heterostructures and with respect to the interface structure.



FAU Authors / FAU Editors

Fink, Rainer Prof. Dr.
Professur für Physikalische Chemie
Steinrück, Hans-Peter Prof. Dr.
Lehrstuhl für Physikalische Chemie II


External institutions with authors

Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI)
Julius-Maximilians-Universität Würzburg
Universität Ulm


How to cite

APA:
Gleim, T., Weinhardt, L., Schmidt, T., Fink, R., Heske, C., Umbach, E.,... Steinrück, H.-P. (2003). Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces. Physical Review B, 67(20), 2053151-2053156. https://dx.doi.org/10.1103/PhysRevB.67.205315

MLA:
Gleim, Thomas, et al. "Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces." Physical Review B 67.20 (2003): 2053151-2053156.

BibTeX: 

Last updated on 2019-20-04 at 14:50