Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces

Gleim T, Weinhardt L, Schmidt T, Fink R, Heske C, Umbach E, Hansen L, Landwehr G, Waag A, Fleszar A, Richter B, Ammon C, Probst M, Steinrück HP (2003)

Publication Type: Journal article, Original article

Publication year: 2003

Journal

Physical Review B American Physical Society

Original Authors: Gleim Th., Weinhardt L., Schmidt Th., Fink R., Heske C., Umbach E., Hansen L., Landwehr G., Waag A., Fleszar A., Richter B., Ammon Ch., Probst M., Steinrück H.-P.

Publisher: American Physical Society

Book Volume: 67

Pages Range: 2053151-2053156

Article Number: 205315

Journal Issue: 20

DOI: 10.1103/PhysRevB.67.205315

Abstract

We have investigated the influence of As substrate passivation on the electronic level alignment of the heterovalent BeTe/Si(111) interface. Employing photoelectron spectroscopy, we have performed k-resolved measurements at selected excitation energies in the uv range to maximize the contribution from the F point for a correct determination of the valence band maximum. These results are compared with k-integrated data using a density-of-states function from density functional theory. For BeTe(100) and BeTe(111), we find a negligible influence of surface orientation on the position of the valence band maximum. The As passivation increases the valence band offset by 0.24 eV (±0.13 eV) compared to BeTe on an unpassivated Si substrate, thus leading to a significantly increased step in the valence band (0.37±0.13 eV). The results are discussed with respect to the barriers for electron and hole injection in heterostructures and with respect to the interface structure.

Authors with CRIS profile

Rainer Fink Professur für Physikalische Chemie Hans-Peter Steinrück Lehrstuhl für Physikalische Chemie II

Involved external institutions

Julius-Maximilians-Universität Würzburg DE Germany (DE) Universität Ulm DE Germany (DE) Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI) DE Germany (DE)

How to cite

APA:

Gleim, T., Weinhardt, L., Schmidt, T., Fink, R., Heske, C., Umbach, E.,... Steinrück, H.-P. (2003). Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces. Physical Review B, 67(20), 2053151-2053156. https://dx.doi.org/10.1103/PhysRevB.67.205315

MLA:

Gleim, Thomas, et al. "Influence of As passivation on the electronic level alignment at BeTe/Si(111) interfaces." Physical Review B 67.20 (2003): 2053151-2053156.

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