Prof. Dr. Lothar Ley


Naturwissenschaftliche Fakultät

Mitarbeit in Forschungsprojekten

ELINAS: ELINAS - Erlangen Center for Literature and Natural Science
Dr. Aura Heydenreich; Prof. Dr. Christine Lubkoll-Klotz; Prof. Dr. Klaus Mecke
(01.01.2014 - 31.12.2017)

Publikationen (Download BibTeX)

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Akhgar, G., Ley, L., Creedon, D.L., Stacey, A., Mccallum, J.C., Hamilton, A.R., & Pakes, C. (2019). G -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond. Physical Review B, 99(3).
Rietwyk, K.J., Keller, D.A., Ginsburg, A., Barad, H.N., Priel, M., Majhi, K.,... Zaban, A. (2019). Universal Work Function of Metal Oxides Exposed to Air. Advanced Materials Interfaces.
Ley, L., Smets, Y., Pakes, C.I., & Ristein, J. (2013). Calculating the Universal Energy –Level Alignment of Organic Molecules on Metal Oxides. Advanced Functional Materials, 23, 794.
Rietwyk, K.J., Smets, Y., Bashouti, M., Christiansen, S.H., Schenk, A., Tadich, A.,... Pakes, C.I. (2013). Charge transfer doping of Silicon. Physical Review Letters, n/a, n/a.
O'Donnell, K.M., Edmonds, M.T., Ristein, J., Tadich, A., Thomsen, L., Wu, Q.-H.,... Ley, L. (2013). Diamond surfaces with air-stable negative electron affinity and giant electron yield enhancement. Advanced Functional Materials, 23, 5608-5614.
Ley, L., & Ristein, J. (2012). Diamond Surfaces. In Surface and Interface Science. (pp. 889-940). Weinheim, Germany: Wiley-VCH.
Edmonds, M.T., Pakes, C.I., Mammadov, S., Zhang, W., Tadich, A., Ristein, J., & Ley, L. (2011). Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond. Applied Physics Letters, 88, 102101.
Speck, F., Ostler, M., Röhrl, J., Emtsev, K., Hundhausen, M., Ley, L., & Seyller, T. (2010). Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM. Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 398.
Ristein, J., Zhang, W., Speck, F., Ostler, M., Ley, L., & Seyller, T. (2010). Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 43, 345303.
Weingart, S., Bock, C., Kunze, U., Emtsev, K., Seyller, T., & Ley, L. (2010). Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties. Physica E-Low-Dimensional Systems & Nanostructures, 42(4), 687-690.

Zuletzt aktualisiert 2016-05-05 um 05:08