Dr.-Ing. Ulrike Künecke



Organisation


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Institute Materials for Electronics and Energy Technology (i-MEET)


Publications (Download BibTeX)

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Müller, R., Künecke, U., Queren, D., Sakwe, A., & Wellmann, P. (2006). Growth of silicon carbide bulk crystals with a modified physical vapor transport technique. Chemical Vapor Deposition, 12(8-9), 557-561. https://dx.doi.org/10.1002/cvde.200606474
Künecke, U., & Wellmann, P. (2006). Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping. European Physical Journal-Applied Physics, 34(3), 209-213. https://dx.doi.org/10.1051/epjap:2006055
Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., & Wellmann, P. (2006). Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. Physica Status Solidi C: Conferences, 3(3), 558-561. https://dx.doi.org/10.1002/pssc.200564148
Contreras, S., Zielinski, M., Konczewicz, L., Blanc, C., Juillaguet, S., Müller, R.,... Camassel, J. (2006). Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method. Materials Science Forum, 527-529, 633-636. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.633
Müller, R., Künecke, U., Weingärtner, R., Schmitt, H., Desperrier, P., & Wellmann, P. (2005). High Al-doping of SiC using a modified PVT (M-PVT) growth set-up. Materials Science Forum, 483, 31-34. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.31
Wellmann, P., Straubinger, T., Desperrier, P., Müller, R., Künecke, U., Sakwe, A.,... Pons, M. (2005). Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions. Materials Science Forum, 483, 25-30. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.25
Wellmann, P., Straubinger, T., Künecke, U., Müller, R., Sakwe, A., Pons, M.,... Camassel, J. (2005). Optical mapping of aluminum doped p-type SiC wafers. Physica Status Solidi A-Applications and Materials Science, 202(4), 598-601. https://dx.doi.org/10.1002/PSSA.200460436
Wellmann, P., Albrecht, A., Künecke, U., Birkmann, B., Müller, G., & Jurisch, M. (2004). Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping. European Physical Journal-Applied Physics, 27(1-3), 357-361. https://dx.doi.org/10.1051/epjap:2004041
Bickermann, M., Weingärtner, R., Herro, Z.G., Hofmann, H.-D., Künecke, U., Wellmann, P., & Winnacker, A. (2003). Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals. Materials Science Forum, 433-436, 337-340. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.337
Weingärtner, R., Bickermann, M., Herro, Z.G., Künecke, U., Sakwe, A., Wellmann, P., & Winnacker, A. (2003). Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 333-336. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.333

Last updated on 2016-05-05 at 05:00