Dr.-Ing. Ulrike Künecke



Organisation


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Institute Materials for Electronics and Energy Technology (i-MEET)


Publications (Download BibTeX)

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Benz, F., Strunk, H.P., Schaab, J., Künecke, U., & Wellmann, P. (2013). Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system. Journal of Applied Physics, 114(7). https://dx.doi.org/10.1063/1.4818815
Oehlschläger, F., Müller, J., Künecke, U., Hoelzing, A., Schurr, R., Hock, R., & Wellmann, P. (2010). Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography. Energy Procedia, 2(1), 183-188. https://dx.doi.org/10.1016/j.egypro.2010.07.026
Tang, K., Künecke, U., Oehlschläger, F., Hölzing, A., Schurr, R., Hock, R., & Wellmann, P. (2010). Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials. Solar Energy Materials and Solar Cells, 94(11), 1875-1879. https://dx.doi.org/10.1016/j.solmat.2010.06.002
Hens, P., Künecke, U., & Wellmann, P. (2009). Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum. Materials Science Forum, 600-603, 19-22. https://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.19
Hens, P., Künecke, U., Konias, K., Hock, R., & Wellmann, P. (2009). Germanium Incorporation during PVT Bulk Growth of Silicon Carbide. Materials Science Forum, 615-617, 11-14. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.11
Wellmann, P., Müller, R., Sakwe, A., Künecke, U., Hens, P., Stockmeier, M.,... Pons, M. (2008). Bulk growth of SiC. Materials Research Society Symposium - Proceedings, 1069, 3-14. https://dx.doi.org/10.1557/PROC-1069-D01-01
Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256. https://dx.doi.org/10.1002/pssb.200743520
Müller, R., Künecke, U., Weingärtner, R., Maier, M., & Wellmann, P. (2006). Anomalous charge carrier transport phenomena in highly aluminum doped SiC. Physica Status Solidi C: Conferences, 3(3), 554-557. https://dx.doi.org/10.1002/pssc.200564150
Wellmann, P., Queren, D., Müller, R., Sakwe, A., & Künecke, U. (2006). Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC. Materials Science Forum, 527-529, 79-82. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.79
Sakwe, A., Müller, R., Queren, D., Künecke, U., & Wellmann, P. (2006). Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC. Physica Status Solidi (C) Current Topics in Solid State Physics, 3(3), 567-570. https://dx.doi.org/10.1002/pssc.200564153

Last updated on 2016-05-05 at 05:00