PD Dr. Tobias Erlbacher



Organisation


Technische Fakultät
Lehrstuhl für Elektronische Bauelemente



Project lead


Charge compensation in 4H silicon carbide - Simulation, modelling and experimental verification
PD Dr. Tobias Erlbacher
(01/04/2016 - 14/04/2019)


Publications (Download BibTeX)

Go to first page Go to previous page 1 of 2 Go to next page Go to last page

Erlekampf, J., Kallinger, B., Weiße, J., Rommel, M., Berwian, P., Friedrich, J., & Erlbacher, T. (2019). Deeper insight into lifetime-engineering in 4H-SiC by ion implantation. Journal of Applied Physics, 126(4). https://dx.doi.org/10.1063/1.5092429
Matthus, C.D., Di Benedetto, L., Kocher, M., Bauer, A.J., Licciardo, G.D., Rubino, A., & Erlbacher, T. (2019). Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K. IEEE Sensors Journal, 19(8), 2871-2878. https://dx.doi.org/10.1109/JSEN.2019.2891293
Rattmann, G., Pichler, P., & Erlbacher, T. (2019). On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics. physica status solidi (a). https://dx.doi.org/10.1002/pssa.201900167
Matlok, S., Boettcher, N., Jahn, M., Hörauf, P., Erlbacher, T., & Eckardt, B. (2019). Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers. In Proceedings of the 2019 PCIM Europe. Nürnberg, DE.
Matthus, C.D., Bauer, A.J., Frey, L., & Erlbacher, T. (2019). Wavelength-selective 4H-SiC UV-sensor array. Materials Science in Semiconductor Processing, 90, 205-211. https://dx.doi.org/10.1016/j.mssp.2018.10.019
Yu, Z., Zeltner, S., Boettcher, N., Rattmann, G., Leib, J., Bayer, C.,... Frey, L. (2018). Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters. In Proceedings of the 7th Electronic System-Integration Technology Conference, ESTC 2018. Institute of Electrical and Electronics Engineers Inc..
Matthus, C., Erlbacher, T., Schöfer, B., Bauer, A., & Frey, L. (2017). Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration. Materials Science Forum, 897, 618-621. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.618
Matthus, C., Burenkov, A., & Erlbacher, T. (2017). Optimization of 4H-SiC photodiodes as selective UV sensors. Materials Science Forum, 897, 622-625. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.622
Matthus, C., Erlbacher, T., Burenkov, A., Bauer, A., & Frey, L. (2016). Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization. Materials Science Forum, 858, 1032-1035. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.1032
Burenkov, A., Matthus, C., & Erlbacher, T. (2016). Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation. IEEE Sensors Journal, 16(11), 4246-4252. https://dx.doi.org/10.1109/JSEN.2016.2539598

Last updated on 2019-05-08 at 09:07