Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Address:
Martensstraße 5/7
91058 Erlangen


Related Project(s)

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(FOR 1600: Chemie und Technologie der Ammonothermal-Synthese von Nitriden):
In situ Visualisierung des ammonothermalen Kristallisationsprozesses mittels Röntgenmesstechnik
Prof. Dr.-Ing. Peter Wellmann
(01/07/2011 - 30/07/2014)


INNER: Im Fokus des Projektes NORLED steht die Herstellung einer neuen Technologie für energieeffiziente, weiße Leuchtdioden auf Basis fluoreszierenden Siliziumkarbids, die im Vgl. zum Stand der Technik umweltfreundlicher und kostengünstiger ist
Prof. Dr.-Ing. Peter Wellmann
(01/05/2010 - 30/04/2012)


CIS-Qualitätsoffensive
Prof. Dr. Rainer Hock; Prof. Dr. Erdmann Spiecker; Prof. Dr.-Ing. Peter Wellmann
(01/02/2010 - 31/01/2013)



Publications (Download BibTeX)

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Schuster, M., Stapf, D., Osterrieder, T., Barthel, V., & Wellmann, P. (2019). Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure. Coatings, 9, 1-16. https://dx.doi.org/10.3390/coatings9080484
Schuh, P., Steiner, J., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks. Materials, 12, 1-8. https://dx.doi.org/10.3390/ma12152353
Schuh, P., Künecke, U., Litrico, G., Mauceri, M., La Via, F., Monnoye, S.,... Wellmann, P. (2019). Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates. Materials Science Forum, 963, 149-152. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.149
Schöler, M., Schuh, P., Steiner, J., & Wellmann, P. (2019). Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base. Materials Science Forum, 963, 157-160. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.157
Steiner, J., Roder, M., Nguyen, B.D., Sandfeld, S., Danilewsky, A., & Wellmann, P. (2019). Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC. Materials, 12(13). https://dx.doi.org/10.3390/ma12132207
Schuh, P., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth. Materials, 12(13). https://dx.doi.org/10.3390/ma12132179
Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://dx.doi.org/10.1016/j.mssp.2018.10.028
Arzig, M., Hsiao, T., & Wellmann, P. (2018). Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules. Advanced Materials Proceedings, 3(9), 540-543. https://dx.doi.org/10.5185/amp.2018/1414
Abdelhaleem, S., Hassanien, A., Ahmad, R., Schuster, M., Ashour, A., Distaso, M.,... Wellmann, P. (2018). Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique. Journal of Electronic Materials. https://dx.doi.org/10.1007/s11664-018-6636-4
Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21. https://dx.doi.org/10.1088/1361-6641/aad831
Kanazawa, Y., Fukumoto, Y., Uechi, S., Ohoyama, K., Lederer, M., Happo, N.,... Tsutsui, K. (2018). Enhancement of accuracy of neutron atomic resolution holography. In ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (pp. E404-E404). CHESTER: INT UNION CRYSTALLOGRAPHY.
Uechi, S., Kanazawa, Y., Fukumoto, Y., Ohoyama, K., Lederer, M., Happo, N.,... Iga, H. (2018). Local structure observation of Sm doped RB6 (R: rare earth)by white neutron atomic resolution holography. In ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (pp. E403-E403). CHESTER: INT UNION CRYSTALLOGRAPHY.
Arzig, M., Salamon, M., Uhlmann, N., Johansen, B.A., & Wellmann, P. (2018). Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules. Materials Science Forum, 924, 245-248. https://dx.doi.org/10.4028/www.scientific.net/MSF.924.245
Schimmel, S., Duchstein, P., Steigerwald, T., Kimmel, A.-C., Schlücker, E., Zahn, D.,... Wellmann, P. (2018). In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN. Journal of Crystal Growth, 498, 214-223. https://dx.doi.org/10.1016/j.jcrysgro.2018.06.024
Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201800019
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68. https://dx.doi.org/10.1016/j.mssp.2017.12.012
Schuster, M., Sisterhenn, P., Graf, L., & Wellmann, P. (2018). Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques. International Journal of Nanoparticle Research, 2(4).
Schuster, M., Groß, S., Roider, F., Maksimenko, I., & Wellmann, P. (2017). Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires. International Journal of Nanoparticles and Nanotechnology, 3(013).
Wellmann, P. (2017). Materials-Related Solutions for Industry. In Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (Eds.), Materials Innovation for the global circular economy and sustainable society..
Wilhelm, M., Syväjärvi, M., & Wellmann, P. (2017). Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence. Advanced Materials Proceedings, 2(12), 769-773. https://dx.doi.org/10.5185/amp.2017/415

Last updated on 2019-24-04 at 10:30