Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Martensstraße 5/7
91058 Erlangen

Related Project(s)

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20/12/2018 - 31/05/2020)

Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01/01/2018 - 31/12/2020)

MYCIGS: Energieertragsoptimierte Cu (In, Ga) (S,Se) 2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01/10/2017 - 30/09/2020)

CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)

Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)

Publications (Download BibTeX)

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Hassanien, A.E., Abdelhaleem, S., Ahmad, R., Schuster, M., Moustafa, S.H., Distaso, M.,... Wellmann, P. (2019). Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique. Journal of Nanoelectronics and Optoelectronics, 14(10), 1394-1400.
Tarekegne, A.T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., & Ou, H. (2019). Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. Applied Physics B-Lasers and Optics, 125(9).
Arzig, M., Steiner, J., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals. Materials, 12(16).
Schöler, M., Brecht, C., & Wellmann, P. (2019). Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide. Materials, 12(15).
Schuster, M., Stapf, D., Osterrieder, T., Barthel, V., & Wellmann, P. (2019). Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure. Coatings, 9, 1-16.
Schuh, P., Steiner, J., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks. Materials, 12, 1-8.
Schuh, P., Künecke, U., Litrico, G., Mauceri, M., La Via, F., Monnoye, S.,... Wellmann, P. (2019). Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates. Materials Science Forum, 963, 149-152.
Schöler, M., Schuh, P., Steiner, J., & Wellmann, P. (2019). Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base. Materials Science Forum, 963, 157-160.
Steiner, J., Roder, M., Nguyen, B.D., Sandfeld, S., Danilewsky, A., & Wellmann, P. (2019). Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC. Materials, 12(13).
Salamon, M., Arzig, M., Uhlmann, N., & Wellmann, P. (2019). Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography. Materials Science Forum, 963, 5-9.
Schuh, P., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth. Materials, 12(13).
Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12.
Steiner, J., Arzig, M., Denisov, A., & Wellmann, P. (2019). Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results. Crystal Research and Technology.
Arzig, M., Hsiao, T., & Wellmann, P. (2018). Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules. Advanced Materials Proceedings, 3(9), 540-543.
Abdelhaleem, S., Hassanien, A., Ahmad, R., Schuster, M., Ashour, A., Distaso, M.,... Wellmann, P. (2018). Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique. Journal of Electronic Materials.
Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21.
Uechi, S., Kanazawa, Y., Fukumoto, Y., Ohoyama, K., Lederer, M., Happo, N.,... Iga, H. (2018). Local structure observation of Sm doped RB6 (R: rare earth)by white neutron atomic resolution holography. In ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (pp. E403-E403). CHESTER: INT UNION CRYSTALLOGRAPHY.
Kanazawa, Y., Fukumoto, Y., Uechi, S., Ohoyama, K., Lederer, M., Happo, N.,... Tsutsui, K. (2018). Enhancement of accuracy of neutron atomic resolution holography. In ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES (pp. E404-E404). CHESTER: INT UNION CRYSTALLOGRAPHY.
Arzig, M., Salamon, M., Uhlmann, N., Johansen, B.A., & Wellmann, P. (2018). Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules. Materials Science Forum, 924, 245-248.
Schimmel, S., Duchstein, P., Steigerwald, T., Kimmel, A.-C., Schlücker, E., Zahn, D.,... Wellmann, P. (2018). In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN. Journal of Crystal Growth, 498, 214-223.

Last updated on 2019-24-04 at 10:30