Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Martensstraße 5/7
91058 Erlangen

Related Project(s)

CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)

Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)

(FOR 1600: Chemie und Technologie der Ammonothermal-Synthese von Nitriden):
In situ Visualisierung des ammonothermalen Kristallisationsprozesses mittels Röntgenmesstechnik
Prof. Dr.-Ing. Peter Wellmann
(01/07/2011 - 30/07/2014)

INNER: Im Fokus des Projektes NORLED steht die Herstellung einer neuen Technologie für energieeffiziente, weiße Leuchtdioden auf Basis fluoreszierenden Siliziumkarbids, die im Vgl. zum Stand der Technik umweltfreundlicher und kostengünstiger ist
Prof. Dr.-Ing. Peter Wellmann
(01/05/2010 - 30/04/2012)

Prof. Dr. Rainer Hock; Prof. Dr. Erdmann Spiecker; Prof. Dr.-Ing. Peter Wellmann
(01/02/2010 - 31/01/2013)

Publications (Download BibTeX)

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Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12.
Arzig, M., Hsiao, T., & Wellmann, P. (2018). Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules. Advanced Materials Proceedings, 3(9), 540-543.
Abdelhaleem, S., Hassanien, A., Ahmad, R., Schuster, M., Ashour, A., Distaso, M.,... Wellmann, P. (2018). Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique. Journal of Electronic Materials.
Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21.
Schimmel, S., Duchstein, P., Steigerwald, T., Kimmel, A.-C., Schlücker, E., Zahn, D.,... Wellmann, P. (2018). In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN. Journal of Crystal Growth, 498, 214-223.
Arzig, M., Salamon, M., Uhlmann, N., Johansen, B.A., & Wellmann, P. (2018). Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules. Materials Science Forum, 924, 245-248.
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68.
Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology.
Schuster, M., Sisterhenn, P., Graf, L., & Wellmann, P. (2018). Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques. International Journal of Nanoparticle Research, 2(4).
Schuster, M., Groß, S., Roider, F., Maksimenko, I., & Wellmann, P. (2017). Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires. International Journal of Nanoparticles and Nanotechnology, 3(013).
Wellmann, P. (2017). Materials-Related Solutions for Industry. In Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (Eds.), Materials Innovation for the global circular economy and sustainable society.
Wilhelm, M., Syväjärvi, M., & Wellmann, P. (2017). Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence. Advanced Materials Proceedings, 2(12), 769-773.
Yakimova, R., Ivanov, I.G., Vines, L., Linnarsson, M.K., Gällström, A., Giannazzo, F.,... Jokubavicius, V. (2017). Growth, defects and doping of 3C-SiC on hexagonal polytypes. ECS Journal of Solid State Science and Technology, 6(10), P741-P745.
Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778.
Wellmann, P. (2017). Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond. Zeitschrift fur Anorganische und Allgemeine Chemie, 643(21), 1312-1322.
Schimmel, S., Koch, M., Macher, P., Kimmel, A.-C., Steigerwald, T., Alt, N.,... Wellmann, P. (2017). Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers. Journal of Crystal Growth, 479, 59-66.
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162.
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. Lyngby, DK.
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Thermally Stimulated Luminescence in 6H Fluorescent SiC. Washington, DC, US.
Häusler, J., Schimmel, S., Wellmann, P., & Schnick, W. (2017). Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23(50), 12275-12282.

Last updated on 2016-05-05 at 04:58