Lehrstuhl für Angewandte Physik


Description:


Research at the Chair for Applied Physics is devoted to electrons in solids since its foundations in 1948. We pursue fundamental research, which paves the way for innovative electronics beyond silicon electronics. Our focus is on material systems with unusual properties like graphene (a single layer of graphite) for ultrafast electronics, single organic molecules as smallest units for electronic functionality, but also semiconductors with wide bandgap (e.g. Silicon carbide) for powere electronics. Particular emphasis is put on the interaction of matter and light, in particular in Terahertz spectral regime.


Address:
Staudtstraße 7
91058 Erlangen



Subordinate Organisational Units

Professur für Angewandte Physik


Research Fields

Charge transport on the molecular scale (Prof. Weber)
Graphene
Light-Matter Interaction in the Terahertz Range (Dr. Malzer, Prof. Weber)
Semiconductors: Dopands and Defects (Dr. Krieger, Prof. Weber)


Related Project(s)

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Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene
Prof. Dr. Heiko B. Weber
(01/04/2017)


Monolithic electronic circuits based on epitaxial graphene
Prof. Dr. Heiko B. Weber
(01/12/2013)


(SPP 1459: Graphen):
Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)
Prof. Dr. Heiko B. Weber
(01/10/2013)


(SFB 953: Synthetic Carbon Allotropes):
SFB 953: Graphene and Organic Molecules: Transport Experiments (B08)
Prof. Dr. Heiko B. Weber
(01/01/2012)


(Training NETwork on Functional Interfaces for SiC):
NetFISiC: Training NETwork on Functional Interfaces for SiC
Dr. Michael Krieger
(01/01/2009 - 31/12/2011)



Publications (Download BibTeX)

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Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. In Materials Science Forum.
Higuchi, T., Heide, C., Ullmann, K., Weber, H.B., & Hommelhoff, P. (2017). Light-field-driven currents in graphene. Nature, 550(550), 224–228. https://dx.doi.org/10.1038/nature23900
Kißlinger, F., Ott, C., & Weber, H.B. (2017). Origin of nonsaturating linear magnetoresistivity. Physical Review B, 95(2), 024204. https://dx.doi.org/10.1103/PhysRevB.95.024204
Kißlinger, F., Popp, M.A., Jobst, J., Shallcross, S., & Weber, H.B. (2017). Charge-carrier transport in large-area epitaxial graphene. Annalen Der Physik, 2017. https://dx.doi.org/10.1002/andp.201700048
Leitherer, S., Brana Coto, P., Ullmann, K., Weber, H.B., & Thoss, M. (2017). Charge Transport in C60-based Single-Molecule Junctions with Graphene Electrodes. Nanoscale, 9(21), 7217-7226. https://dx.doi.org/10.1039/C7NR00170C
Niesner, D., Hauck, M., Shrestha, S., Levchuk, I., Matt, G., Osvet, A.,... Fauster, T. (2017). Spin-split bands cause the indirect band gap of (CH3NH3)PbI3: Experimental evidence from circular photogalvanic e ect. Materials Science (cond-mat.mtrl-sci).
Shallcross, S., Sharma, S., & Weber, H.B. (2017). Anomalous Dirac point transport due to extended defects in bilayer graphene. Nature Communications, 8(1), 342. https://dx.doi.org/10.1038/s41467-017-00397-8
Vecera, P., Eigler, S., Kolesnik-Gray, M., Krstic, V., Vierck, A., Maultzsch, J.,... Hirsch, A. (2017). Degree of functionalisation dependence of individual Raman intensities in covalent graphene derivatives. Scientific Reports, 7. https://dx.doi.org/10.1038/srep45165
Caridad, J.M., Connaughton, S., Ott, C., Weber, H.B., & Krstic, V. (2016). An electrical analogy to Mie scattering. Nature Communications, 7. https://dx.doi.org/10.1038/ncomms12894
Connaughton, S., Kolesnik-Gray, M., Hobbs, R., Lotty, O., Holmes, J.D., & Krstic, V. (2016). Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires. Beilstein Journal of Nanotechnology, 7, 1284-1288. https://dx.doi.org/doi:10.3762/bjnano.7.119
Hauck, M., Weiße, J., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2016). Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy. In Materials Science Forum.
Higuchi, T., Heide, C., Ullmann, K., Weber, H.B., & Hommelhoff, P. (2016). Light-field driven currents in graphene. arXiv, 12.
Kolesnik-Gray, M., Collins, G., Holmes, J.D., & Krstic, V. (2016). Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires. Beilstein Journal of Nanotechnology, 7, 1574–1578.
Krieger, M., Rühl, M., Sledziewski, T., Ellrott, G., Palm, T., Weber, H.B., & Bockstedte, M.G. (2016). Doping of 4H-SiC with group IV elements. Materials Science Forum, 858, 301. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.301
Nowak, T., Hartmann, M., Zech, T., & Thielecke, J. (2016). A Path Loss and Fading Model for RSSI-based Localization in Forested Areas. In IEEE-APS Topical Conference on Antennas and Propagation in Wireless Communications (IEEE-APWC 2016). Cairns, AU.
Pobegen, G., Weiße, J., Hauck, M., Weber, H.B., & Krieger, M. (2016). On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs. Materials Science Forum, 858(473). https://dx.doi.org/10.4028/www.scientific.net/MSF.858.473
Santamaría-Botello, G., Garcia Munoz, L.E., Sedlmeir, F., Preu, S., Preu, S., Segovia-Vargas, D.,... Weber, H.B. (2016). Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism. Optics Express, 24(23), 26503-26514. https://dx.doi.org/10.1364/OE.24.026503
Schäfer, R., Weber, K., Kolesnik-Gray, M., Hauke, F., Krstic, V., Meyer, B., & Hirsch, A. (2016). Substrate-Modulated Reductive Graphene Functionalization. Angewandte Chemie, 55, 14858-14862.
Schäfer, R., Weber, K., Kolesnik-Gray, M., Hauke, F., Krstic, V., Meyer, B., & Hirsch, A. (2016). Substratmodulierte reduktive Graphenfunktionalisierung. Angewandte Chemie, 128(47), 15080-15084. https://dx.doi.org/10.1002/ange.201607427
Sledziewski, T., Vivona, M., Alassaad, K., Kwasnicki, P., Arvinte, R., Beljakowa, S.,... Krieger, M. (2016). Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition. Journal of Applied Physics, 120(20). https://dx.doi.org/10.1063/1.4967301

Last updated on 2017-09-10 at 09:43